SD1805

The SD1805 is an NPN silicon transistor designed for high gain linear performance at 2.0GHz.Features of the SD1805 are:(1)frequency is 2.3GHz;(2)power out is 0.2W;(4)power gain is 11dB;(5)voltage is 15V;(6)IC is 80mA;(7)gold metallized die;(8)overlay stripline package;(9)common emitter configuration.

The absolute maximum ratings of the SD1805 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 30,the unit is V;(2):the symbol is VCES,the parameter is collector-emitter voltage,the value is 15,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 2,the unit is V;(4):the symbol is IC,the parameter is collector current(max.),the value is 0.1,the unit is A;(5):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 3.9,the unit is W;(6):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +200,the unit is ;(7):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the SD1805 can be summarized as:(1):the symbol is BVCBO,the test conditions is IC=5mA,the min is 30,the typ is 35,the unit is V;(2):the symbol is BVEBO,the test conditions is IC=1mA,the min is 2,the typ is 3,the unit is V;(3):the symbol is BVCES,the test conditions is IC=5mA,the min is 15,the typ is 20,the unit is V;(4):the symbol is hFE,the test conditions is VCE=3V,the min is 20,the typ is 75,the max is 150.