SD1526-01

DescriptionThe SD1526-01 is a a gold metallized, silicon NPN power transistor. The feature of SD1526-01 are as follows: (1)designed for high power pulse IFF, DME, TACAN; (2)6.0W IFF 1030-1090MHz; (3)5.0W IFF 1025-1150MHz; (4)4.0W IFF 960-1215MHz; (5)greater than 9.5dB gain; (6)referactory ballasti...

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SeekIC No. : 004486370 Detail

SD1526-01: DescriptionThe SD1526-01 is a a gold metallized, silicon NPN power transistor. The feature of SD1526-01 are as follows: (1)designed for high power pulse IFF, DME, TACAN; (2)6.0W IFF 1030-1090MHz; (3...

floor Price/Ceiling Price

Part Number:
SD1526-01
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/28

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Product Details

Description



Description

The SD1526-01 is a a gold metallized, silicon NPN power transistor. The feature of SD1526-01 are as follows: (1)designed for high power pulse IFF, DME, TACAN; (2)6.0W IFF 1030-1090MHz; (3)5.0W IFF 1025-1150MHz; (4)4.0W IFF 960-1215MHz; (5)greater than 9.5dB gain; (6)referactory ballasting and low thermal resistance for reliability and ruggedness; (7)infinite load-VSWR capability at specified operating conditions; (8)input matched, common base configuration.

The absolute maximum ratings of the SD1526-01 are: (1)collector-base voltage: 45V; (2)collector-emitter voltage: 45V; (3)emitter-base voltage: 3.5V; (4)collector current: 1.0A; (5)total power dissipation: 21.9W; (6)storage temperature: -65 to 150; (7)junction temperature:200.

The following is about the electrical characteristics of SD1526-01: (1)BVCES: 45V min at IC=25mA, VEB=0V; (2)BVCEO: 45V min at IC=10mA, IB=0; (3)BVEBO: 3.5V min at IE=10mA, IC=0; (4)ICBS: 1mA max at VCB=28V, IE=0; (5)PO: 6.0W typical at f=1090MHz, VCE=28V; (6)PG: 9.5dB typical at f=1090MHz, VCE=28V.




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