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SD103CWS

Features: For general purpose applications. The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast s...

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SeekIC No. : 004486233 Detail

SD103CWS: Features: For general purpose applications. The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast swit...

SD103CWS Data Sheet

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Part Number:
SD103CWS
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

For general purpose applications.
The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems.
This diode is also available in Mini-MELF case with the type designation LL103A . LL103C, DO-35 case with the type designations SD103A .. SD103C and SOD-123 case with type designations SD103W ... SD103CW.





Specifications

Part Number SD103CWS
Power Rating (mW) 200
Peak Repetitive Reverse Voltage VRRM (V) 20
Forward Continuous Current IFM (mA) 350
Forward Voltage Drop VF (V) 0.37
@ IF (mA) 20
Max Reverse Current IR (µA) 5
@ VR (V) 10
Capacitance CTOT (typ) (pF) 28


Symbol Value Unit
Peak Inverse Voltage SD103AWS
SD103BWS
SD103CWS		 VRRM
VRRM
VRRM		 40
30
20		 Volts
Volts
Volts
Power Dissipation at Tamb = 25°C Ptot 1501) mW
Single Cycle Surge
10 sSquare Wave		 IFSM 2 Amps
Junction Temperature Tj 1251) °C
Storage Temperature Range TS 55 to +1501) °C
Thermal Resistance Junction to Ambient Air RJA 650 °C/W





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