SD1019

The SD1019 is designed as one kind of RF & microwave transistor device that employs a multi emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters results in high RF current handing capability, high power gain. And this device can be used in 108 to 152 MHz FM mobile applications.

Features of the SD1019 are:(1)class C transistor;(2)frequency: 136 MHz;(3)voltage: 28.0 V;(4)power out: 80 W;(5)power gain: 9.0 dB;(6)common emitter. The absolute maximum ratings of the SD1019 can be summarized as:(1)collector-base voltage: 65.0 V;(2)collector-emitter voltage: 35.0 V;(3)emitter-base voltage: 4.0 V;(4)collector current: 9.0 A;(5)storage temperature: -65 to +150 ;(6)junction temperature: +200 . If you want to know more information such as the electrical characteristics about the SD1019, please download the datasheet in www.seekic.com or www.chinaicmart.com.