SD1013

The SD1013 is a 28V epitaxial is silicon NPN power transistor.Features of the SD1013 are:(1)FM class C transistor;(2)frequency is 150MHz;(3)voltage 28V;(4)power out is 10W;(5)power gain is 10dB;(6)efficiency is 55%TYP;(7)common emitter.

The absolute maximum ratings of the SD1013 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 65.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 35.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 4.0,the unit is V;(4):the symbol is VCES,the parameter is collector-emitter voltage,the value is 65.0,the unit is V;(5):the symbol is IC,the parameter is collector current(max.),the value is 1.0,the unit is A;(6):the symbol is PTOT,the parameter is total device dissipation ,the value is 13.0,the unit is W;(7):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +150,the unit is ;(8):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the SD1013 can be summarized as:(1):the symbol is BVCBO,the test conditions is IC=20mA,IB=0,the value is 65.0,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=10mA,IC=0,the value is 4.0,the unit is V;(3):the symbol is BVCES,the test conditions is IC=200mA,VBE=0,the value is 65.0,the unit is V;(4):the symbol is BVCEO,the test conditions is IC=200mA,IB=0,the value is 35.0,the unit is V;(5):the symbol is ICBS,the test conditions is VCB=30.0V,IE=0,the value is 1.0,the unit is mA;(6):the symbol is hFE,the test conditions is VCE=5.0V,IE=200mA,the value is 5.0.