DescriptionThe SD1006-221KA is designed as one kind of NPN silicon high frequency transistor device that can be used in general purpose amplifier applications. The absolute maximum ratings of the SD1006-221KA can be summarized as:(1)VCEO: 30 V;(2)IC: 400 mA;(3)VCBO: 50 V;(4)PDISS: 3.5 W @ TC = 25 ...
SD1006-221KA: DescriptionThe SD1006-221KA is designed as one kind of NPN silicon high frequency transistor device that can be used in general purpose amplifier applications. The absolute maximum ratings of the SD...
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The SD1006-221KA is designed as one kind of NPN silicon high frequency transistor device that can be used in general purpose amplifier applications. The absolute maximum ratings of the SD1006-221KA can be summarized as:(1)VCEO: 30 V;(2)IC: 400 mA;(3)VCBO: 50 V;(4)PDISS: 3.5 W @ TC = 25 °C;(5)operating junction and storage temperature range: -65 to +200 ;(6)TSTG: -65 °C to +200 °C;(7)JC: 50 °C/W. If you want to know more information about the SD1006-221KA, please download the datasheet in www.seekic.com or www.chinaicmart.com .