SC141B

The SC141B is designed as one kind of triacs gate controlled full-wave silicon switches. This device is designed to switch from an off-state to an on-state for either polarity of applied voltage with positive or negative gate triggering voltages. It has an on-state current rating of 6A at Tc=75°C.

SC141B  has eight features. (1)800V, 125°C Tj operating. (2)High dv/dt and di/dt capability. (3)Low switching losses. (4)High pulse current capability. (5)Low forward and reverse leakage. (6)Slpos oxide glass multilayer passivation system. (7)Advanced unisurface construction. (8)Precise lon implanted diffusion source. Those are all the main features.

Some absolute maximum ratings of SC141B  have been concluded into several points as follow. (1)Its Vdrom would be 200V. (2)Its Irms would be 6A. (3)Its Itsm (for one full cycle of applied principal voltage, at current and temperature shown above for It(rms) would be 80A for 60Hz sinusoidal and would be 75A for 50Hz sinusoidal. (4)Its di/dt would be 70A/us. (5)Its I2t (at Tc shown for It(rms), half-sine wave) would be 25A2s for t=10ms and would be 17A2s for 2.5ms and would be 10A2s for 0.5ms. (6)Its Igtm for 1us max would be 4A. (7)Its Pgm for 1us max would be 10W. (8)Its storage temperature range would be from -40°C to 125°C. (9)Its operating temperature range would be from -40°C to 125°C. (10)Its lead temperature during soldering 10s max would be 230°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of SC141B  are concluded as follow. (1)Its Idrom would be max 0.1mA. (2)Its Vtm would be max 1.83V. (3)Its Iho (gate open, initial principal current=500mA dc) would be max 50mA. (4)Its dv/dt commutating would be min 4V/us. (5)Its dv/dt off-state would be min 30V/us and typ 100V/us. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!