SC108E6

The SC108E6 is designed as one kind of sub-micron ASICs which is siemens announces a sub-micron generation of channelless gate-arrays based on the proven megalogic process.

SC108E6 has eight features. (1)Advanced 0.8 micron (drawn gate-length) ACMOSSH megalogic technology. (2)0.28ns speed (2 input NAND, fanout=2). (3)Slew rate control option. (4)High packing density featuring over 300,000 available gates. (5)Full workstation support. (6)Reduced design turnaround time due to cell preplacement and delay calculation. (7)Fully hierarchical design flow capability. (8)Alternately sourced by toshiba. Those are all the main features.

Some absolute maximum ratings of SC108E6 have been concluded into several points as follow. (1)Its DC supply voltage would be from -0.3V to 7.0V. (2)Its input voltage would be from -0.3V to Vdd+0.3V. (3)Its output voltage would be from -0.3V to Vdd+0.3V. (4)Its DC-input diode current would be from -20mA to 20mA. (5)Its DC output diode current would be from -20mA to 20mA. (6)Its storage temperature range would be from -65°C to 150°C. (7)Its junction temperature (during operation) would be 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some specifications and recommended electrical characteristics of SC108E6 are concluded as follow. (1)Its gate complexity would be 108000. (2)Its estimated usable gates would be 43000. (3)Its maximum pads would be 270. (4)Its max I/O pads would be 256. (4)Its DC supply voltage would be min 4.5V and max 5.5V. (5)Its input voltage would be min 0V and max Vcc. (6)Its output voltage would be min 0V and max Vcc. (7)Its input rise and fall times would be min 0ns and max 5ns. (8)Its junction temperature would be min 0°C and max 125°C. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!