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SBT10K45WS

Features: Low forward voltage drop(VF)Low reverse leakage current (IR)Very small conduction power lossVery small switching power lossVery high switching speedVery high reliabilitySpecifications Characteristic Symbol Value Unit Peak Repetitive Reverse VoltageWorking Peak Reverse Vo...

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SBT10K45WS: Features: Low forward voltage drop(VF)Low reverse leakage current (IR)Very small conduction power lossVery small switching power lossVery high switching speedVery high reliabilitySpecifications ...

SBT10K45WS Data Sheet

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Part Number:
SBT10K45WS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/13

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Product Details

Description



Features:

Low forward voltage drop(VF)
Low reverse leakage current (IR)
Very small conduction power loss
Very small switching power loss
Very high switching speed
Very high reliability


Specifications

Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
RMS Reverse Voltage
VR(RMS)
40
V
Forward Continuous Current (Note 1)
IFM
100
mA
Non-Repetitive Peak Forward Surge Current @t 10us
IFSM
1.0
mA
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
RJA
500
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-40 to +125
°C



Description

SBT10K45WS series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies (SBT®) developed by Silicon-Based Technology Corporation, which exhibit high-performance characteristics for modern switching, conversion and protection applications with high speed and low power consumptions. The package types as described in this data sheet are set forth in routine production; other packages are available upon special orders.




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