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SBDA-302-2B

Features: Metal semiconductor junction with guard ringEpitaxial ConstructionLow forward voltage dropHigh current capacityFor use in low voltage, high frequency inverters, free wheeling,and polarity protection applicationsSpecifications PARAMETER (TEST CONDITIONS) SYMBOL RATINGS UNITS Se...

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SBDA-302-2B: Features: Metal semiconductor junction with guard ringEpitaxial ConstructionLow forward voltage dropHigh current capacityFor use in low voltage, high frequency inverters, free wheeling,and polarity ...

SBDA-302-2B Data Sheet

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Part Number:
SBDA-302-2B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/18

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Product Details

Description



Features:

Metal semiconductor junction with guard ring
Epitaxial Construction
Low forward voltage drop
High current capacity
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications


Specifications

PARAMETER (TEST CONDITIONS) SYMBOL RATINGS UNITS
Series Number   SK302 SK304 SK306 SK308 SK310  
Maximum DC Blocking Voltage VRM 20 40 60 70 100 VOLTS
Maximum RMS Voltage VRMS 14 28 42 49 70
Maximum Peak Recurrent Reverse Voltage VRRM 20 40 60 70 100
Average Forward Rectified Current @ TL = 90(T measured on
cathode lead, 1/32 in. from case))		 IO 3 AMPS
Peak Forward Surge Current ( 8.3mS single half sine wave
superimposed on rated load)		 IFSM 120 100
Maximum Forward Voltage at 3 Amps DC VFM 0.5 0.7 0.8 VOLTS
Maximum Average DC Reverse Current
At Rated DC Blocking Voltage (Note 1)		 @ TL= 25
@ TL = 100		 IRM 0.5
20		 mA
Typical Thermal Resistance, Junction to Ambient RJA 20 °C/W
Typical Junction Capacitance (Note 2) CJ 250 pF
Junction Operating Temperature Range TJ -65 to +125 -65 to+150 °C
Storage Temperature Range TSTG -65 to +150



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