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SB820D

Features: Schottky Barrier Chip C Guard Ring Die Construction for Transient ProtectionHigh Current CapabilityLow Power Loss, High Efficiency High Surge Current Capability For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection ApplicationsPinout Specifications ...

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SB820D: Features: Schottky Barrier Chip C Guard Ring Die Construction for Transient ProtectionHigh Current CapabilityLow Power Loss, High Efficiency High Surge Current Capability For Use in Low Voltage, Hig...

SB820D Data Sheet

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Part Number:
SB820D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

Schottky Barrier Chip C
Guard Ring Die Construction for Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications





Pinout






Specifications

Characteristic

Symbol

SB820D

SB830D

SB840D

SB850D

SB860D

SB880D

SB8100D

Unit

Peak Repetitive Reverse Voltage Working Peak Reverse Voltage
DC Blocking Voltage

VRRM
VRWM
VR

20

30

40

50

60

80

100

V

RMS Reverse Voltage

VR(RMS)

14

21

28

35

42

56

70

V

Average Rectified Output Current @TC = 100

IO

8.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)

IFSM

150

A

Forward Voltage@IF = 8.0A

VFM

0.55

0.75

0.85

V

Peak Reverse Current At Rated DC Blocking Voltage
@TA = 25
@TA = 100

IRM

0.5
50

mA

Typical Junction Capacitance (Note 1)

Cj

400

pF

Typical Thermal Resistance Junction to Case (Note 2)

RJC

60

K/W

Operating and Storage Temperature Range

Tj, TSTG

-50 to +150






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