SA702 Selling Leads, Price trend, SA702 DataSheet download, circuit diagram from SeekIC.com

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 110 Watts 1.40 /W 200 -65 to 150 6.5 A 70V 70V 20VDescriptionSilicon VDMOS ...

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SA702: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...

SA702 Data Sheet

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Part Number:: SA702
Supply Ability:: 5000

Price Break

Qty
1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/12/19

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Recent History
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US $.15 - .22 / Piece

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Features: • Glass passivated junction.• 500W Peak Pulse Power capability on 10/1000 s ...
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TVS Diodes - Transient Voltage Suppressors 500W 70V 10% Unidir

Product Details

Description

Specifications

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
110 Watts	1.40 /W	200	-65 to 150	6.5 A	70V	70V	20V

Description

Silicon VDMOS and LDMOS transistors SA702 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" ^{TM SA702}process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.

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SA702

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