Features: •Wideband (DC - 1GHz)•Low through loss (1dB typical at 200MHz)•Unused input is terminated internally in 50W•Excellent overload capability (1dB gain compression point +18dBm at 300MHz)•Low DC power (170A from 5V supply)•Fast switching (20ns typical)R...
SA630: Features: •Wideband (DC - 1GHz)•Low through loss (1dB typical at 200MHz)•Unused input is terminated internally in 50W•Excellent overload capability (1dB gain compression poin...
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SYMBOL | PARAMETER | RATING | UNITS |
VDD | Supply voltage | -0.5 to +5.5 | V |
PD | Power dissipation, TA = 25oC (still air)1 8-Pin Plastic DIP 8-Pin Plastic SO |
1160 780 |
mW mW |
TJMAX | Maximum operating junction temperature | 150 | °C |
PMAX | Maximum power input/output | +20 | dBm |
TSTG | Storage temperature range | -65 to +150 | °C |
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, JA:
8-Pin DIP: JA = 108°C/W
8-Pin SO: JA = 158°C/W
The SA630 is a wideband RF switch fabricated in BiCMOS technology and incorporating on-chip CMOS/TTL compatible drivers. Its primary function is to switch signals in the frequency range DC - 1GHz from one 50W channel to another. The SA630 is activated by a CMOS/TTL compatible signal applied to the enable channel 1 pin (ENCH1).
The extremely low current consumption makes the SA630 ideal for portable applications. The excellent isolation and low loss makes this a suitable replacement for PIN diodes.
The SA630 is available in an 8-pin dual in-line plastic package and an 8-pin SO (surface mounted miniature) package.