Features: Si photodiode for visible to near IR Si precision photometrySmall packageS9269: 10.1 * 8.9 * 40 t mmS9270: 16.5 * 15.0 * 4.15 t mmActive areaS9269: 5.8 * 5.8 mmS9270: 10 * 10 mmFET input operational amplifier with low power dissipationBuilt-in Rf=1 G, Cf=5 pFLow noise and NEPApplicationP...
S9270: Features: Si photodiode for visible to near IR Si precision photometrySmall packageS9269: 10.1 * 8.9 * 40 t mmS9270: 16.5 * 15.0 * 4.15 t mmActive areaS9269: 5.8 * 5.8 mmS9270: 10 * 10 mmFET input o...
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Si photodiode for visible to near IR Si precision photometry
Small package
S9269: 10.1 * 8.9 * 40 t mm
S9270: 16.5 * 15.0 * 4.15 t mm
Active area
S9269: 5.8 * 5.8 mm
S9270: 10 * 10 mm
FET input operational amplifier with low power dissipation
Built-in Rf=1 G, Cf=5 pF
Low noise and NEP
Parameter |
Symbol |
Value |
Unit |
Supply voltage (op amp) |
Vcc |
±20 |
V |
Power dissipation |
P |
500 |
mW |
Operating temperature |
Topr |
-20 to +60 |
|
Storage temperature |
Tstg |
-20 to +80 |
|