S9012LT1

S9012LT1 is a kind of SOT-23 plastic-encapsulate transistor.

There are some features of S9012LT1 as follows. First is power dissipation: PCM=0.3 W (Tamb=25). The second is collector current: ICM=-0.5 A. Then is collector-base voltage: V(BR)CBO=-40 V. The last one is operating and storage junction temperature range (TJ, Tstg) which is from -55 to +150.

What comes next is about the electrical characteristics of S9012LT1(Tamb=25 unless otherwise specified). The minimum V(BR)CBO (collector-base breakdown voltage) is -40 V at IC=-100A, IE=0. The minimum V(BR)CEO (collector-emitter breakdown voltage) is -25 V at IC=-1 mA, IB=0. The minimum V(BR)EBO (emitter-base breakdown voltage) is -5 V at IE=-100A, IC=0. The maximum ICBO (collector cut-off current) is -0.1A at VCB=-40 V, IE=0. The maximum ICEO (collector cut-off current) is -0.1A at VCB=-20 V, IB=0. The maximum VCE(sat) (collector-emitter saturation voltage) is -0.6 V at IC=-500 mA, IB=-50 mA. The maximum VBE(sat) (base-emitter saturation voltage) is -1.2 V at IC=-500 mA, IB=-50 mA. The minimum fT (transition frequency) is 150 MHz at VCE=-6 V, IC=-20 mA, f=30 MHz.