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S9004P2CT

Features: · Schottky Barrier Chip· Guard Ring Die Construction for Transient Protection· Low Power Loss, High Efficiency· High Surge Capability· High Current Capability and Low Forward Voltage Drop· For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applicatio...

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SeekIC No. : 004483407 Detail

S9004P2CT: Features: · Schottky Barrier Chip· Guard Ring Die Construction for Transient Protection· Low Power Loss, High Efficiency· High Surge Capability· High Current Capability and Low Forward Voltage Drop·...

S9004P2CT Data Sheet

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Part Number:
S9004P2CT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Schottky Barrier Chip
· Guard Ring Die Construction for Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward Voltage Drop
· For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications
· Plastic Material - UL Flammability Classification 94V-0


Specifications

Characteristic
Symbol
S9004P2CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Minimum Avalanche Breakdown Voltage
per element (Note 1) @ 1.5A
-
70
V
Average Rectified Output Current
(Note 1 & 3)
IO
30
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method) (Note 3)
IFSM
250
A
Instantaneous Forward Voltage Drop @ iF = 15A
VFM
0.56
V
Peak Reverse Current @ TC = 25
at Rated DC Blocking Voltage @ TC = 125
IRM
2.0
150
mA
Typical Junction Capacitance per element (Note 2)
Cj
470
pF
Voltage Rate of Change at Rated DC Blocking Voltage
dv/dt
10000
V/s
Non-repetitive Avalanche Energy
(Constant Current During a 20s pulse) @ TC = 125
W
10
mJ
Typical Thermal Resistance Junction to Case per element
(Note 1)
RJc
1.5
K/W
Operating and Storage Temperature Range
Tj, TSTG
-60 +150
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. IFSM and IO values shown are for entire package. For any single diode the values are one half of listed value.


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