S8201 Selling Leads, Price trend, S8201 DataSheet download, circuit diagram from SeekIC.com

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 20 Watts 10.00/W 200 -65 to 150 1.2A 70V 70V 20VDescriptionSili...

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S8201: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...

S8201 Data Sheet

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Part Number:: S8201
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/22

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US $.26 - .34 / Piece

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Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemp...

Product Details

Description

Specifications

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
20 Watts	10.00/W	200	-65 to 150	1.2A	70V	70V	20V

Description

Silicon S8201 VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"™ S8201 process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.

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S8201

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