S5K3A1EA

Features: ` Process Technology: 0.18m Dual Gate Oxide SPQM CMOS` Optical Size: 1/3 inch` Unit Pixel: 3.8 m X 3.8 m` Effective Resolution: 1280X1024, SXGA` Line Progressive Read Out.` 10-bit Raw Image Data Output` Windowing and Panning` Sub-Sampling (2X, 4X, 8X)` Timing Generator for Frame Memoryle...

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SeekIC No. : 004482673 Detail

S5K3A1EA: Features: ` Process Technology: 0.18m Dual Gate Oxide SPQM CMOS` Optical Size: 1/3 inch` Unit Pixel: 3.8 m X 3.8 m` Effective Resolution: 1280X1024, SXGA` Line Progressive Read Out.` 10-bit Raw Imag...

floor Price/Ceiling Price

Part Number:
S5K3A1EA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/26

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Product Details

Description



Features:

 ` Process Technology: 0.18m Dual Gate Oxide SPQM CMOS
 ` Optical Size: 1/3 inch
 ` Unit Pixel: 3.8 m X 3.8 m
 ` Effective Resolution: 1280X1024, SXGA
 ` Line Progressive Read Out.
 ` 10-bit Raw Image Data Output
 ` Windowing and Panning
 ` Sub-Sampling (2X, 4X, 8X)
 ` Timing Generator for Frame Memoryless Scaler
 ` Timing Generator for Stepless Zooming
 ` Continuous and Single Frame Capture Mode
 ` Programmable Exposure Time and Gain Control
 ` Auto Dark Level Compensation
 ` Standby Mode for Power Saving
 ` Maximum 15 Frames per Second for Full Frame Readout with 24 MHz Output Data Rate
 ` Bad Pixel Replacement
 ` Dual Power Supply Voltage: 2.8V/1.8V (2.8V for analog, 1.8V for digital)
 ` Package Type: 48-CLCC/PLCC



Pinout

  Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
Operating voltage
(VDDD, VDDIO, VDDA supply
relative to VSSD, VSSIO, VSSA,VBBA)
VDD
-0.3 to 3.8
V
Input voltage
VIN
-0.3 to VDD+0.3 (Max. 3.8)
Operating temperature
TOPR
-20 to +60
Storage temperature
TSTG
-40 to +125(1)
-40 to +85(2)

NOTES:
1. Storage temperature tolerance for S5K437C(L)X01.
2. Storage temperature tolerance for S5K437C(L)X02 and S5K437C(L)X03.



Description

The S5K3A1EA is highly integrated single chip CMOS image sensor, fabricated by SAMSUNG 0.18um CMOS image sensor process technology. It is developed for image application to realize high efficiency photo sensor. The sensor has 1280 x 1024 effective pixels with 1/3 inch optical format. The S5K3A1EA has on-chip 10-bit ADC blocks to digitize the pixel output and also on-chip CDS to reduce Fixed Pattern Noise (FPN) drastically. With its few interface signals and 10-bit raw data directly connected to the external devices, a camera system can be configured easily.




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