S524AD0XD1XF1

I²C-Bus Interface
` Two-wire serial interface
` Automatic word address increment
EEPROM
` 128K/256K-bit (16,384/32,768 bytes) storage area
` 64-byte page buffer
` Typical 3 ms write cycle time with auto-erase function
` Hardware-based write protection for the entire EEPROM (using the WP pin)
` EEPROM programming voltage generated on chip
` 500,000 erase/write cycles
` 50 years data retention
Operating Characteristics
` Operating voltage
   - 1.8 V to 5.5 V
` Operating current
   - Maximum write current: < 3 mA at 5.5 V
   - Maximum read current: < 400 mA at 5.5 V
   - Maximum stand-by current: < 1 mA at 5.5 V
` Operating temperature range
   - 25°C to + 70°C (commercial)
   - 40°C to + 85°C (industrial)
` Operating clock frequencies
   - 400 kHz at standard mode
   - 1 MHz at fast mode
` Electrostatic discharge (ESD)
   - 5,000 V (HBM)
   - 500 V (MM)
Packages
` 8-pin DIP, and TSSOP

The S524AD0XD1/S524AD0XD1XF1 serial EEPROM has a 128K/256K-bit (16,384/32,768 bytes) capacity, supporting the standard I2C™-bus serial interface. It is fabricated using Samsung's most advanced CMOS technology. The S524AD0XD1XF1 has been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 64 bytes of data into the EEPROM in a single write operation. Another significant feature of the S524AD0XD1/S524AD0XD1XF1 is its support for fast mode and standard mode.