Features: · Easy Gate 1 switch-off with PNP switching transistors inside PLL· High AGC-range with less steep slope· Integrated gate protection diodes· Low noise figure· High gain· Improved cross modulation at gain reduction· SMD packageApplicationLow noise gain controlled input stages in UHF-and V...
S504T: Features: · Easy Gate 1 switch-off with PNP switching transistors inside PLL· High AGC-range with less steep slope· Integrated gate protection diodes· Low noise figure· High gain· Improved cross mod...
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PinoutDescriptionThe S504TR-GS08 is designed as one kind of MOS Monolithic Integrated Circuit devi...
Parameter | Test condition |
Symbol |
Value |
Unit |
Drain - source voltage |
VDS |
8 |
V | |
Drain current |
ID |
30 |
mA | |
Gate 1/Gate 2 - source peak current |
± IG1/G2SM |
10 |
mA | |
Gate 1/Gate 2 - source voltage |
±VG1/G2SM |
6 |
V | |
Total power dissipation | Tamb 60 °C |
Ptot |
200 |
mW |
Channel temperature |
TCh |
150 |
||
Storage temperature range |
Tstg |
- 55 to + 150 |