Features: • Easy Gate 1 switch-off with PNP switching transistors inside PLL• High AGC-range with less steep slope• Integrated gate protection diodes• Low noise figure• High gain, very high forward transadmittance (40 mS typ.)• Improved cross modulation at gain ...
S503TX: Features: • Easy Gate 1 switch-off with PNP switching transistors inside PLL• High AGC-range with less steep slope• Integrated gate protection diodes• Low noise figure•...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Test condition |
Symbol |
Value |
Unit |
Drain - source voltage |
VDS |
8 |
V | |
Drain current |
ID |
30 |
mA | |
Gate 1/Gate 2 - source peak current |
± IG1/G2SM |
10 |
mA | |
Gate 1 - source voltage |
+ VG1S |
6 |
V | |
- VG1S |
1.5 |
V | ||
Gate 2 - source voltage |
± VG2SM |
6 |
V | |
Total power dissipation | Tamb 60 °C |
Ptot |
200 |
mW |
Channel temperature |
TCh |
150 |
||
Storage temperature range |
Tstg |
- 55 to + 150 |