Features: ` High radiant sensitivity` Miniature T3/4 flat plastic package with IR filter` Very wide angle of half sensitivity = ± 40°` Suitable for near infrared radiation` Suitable for 0.1 (2.54 mm) centertocenter spacingApplicationDetector in electronic control and drive circuitsSpecifications...
S350P: Features: ` High radiant sensitivity` Miniature T3/4 flat plastic package with IR filter` Very wide angle of half sensitivity = ± 40°` Suitable for near infrared radiation` Suitable for 0.1 (2.54 ...
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Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Collector Emitter Voltage |
VCEO |
32 |
V | |
Emitter Collector Voltage |
VCEO |
5 |
V | |
Collector Current |
IC |
50 |
mA | |
Peak Collector Current |
tp/T = 0.5, tp 10 ms |
ICM |
100 |
mA |
Total Power Dissipation |
Tamb 55 |
Ptot |
100 |
mW |
Junction Temperature |
Tj |
100 |
| |
Storage Temperature Range |
Tstg |
55.+100 |
| |
Soldering Temperature |
t 3 s |
Tsd |
260 |
|
Thermal Resistance Junction/Ambient |
RthJA |
450 |
K/W |
S350P is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature plastic case with flat window.
With a lead centertocenter spacing of 2.54mm and a package width of 2.4mm the S350P are easily stackable on PC boards and assembled to arrays of unlimited size.
The epoxy package of S350P is an IR filter, spectrally matched to GaAs IR emitters with p > 850nm.