S29C51001B Selling Leads, Price trend, S29C51001B DataSheet download, circuit diagram from SeekIC.com

Features: 128Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 8KB Boot Block (lockable) 512 bytes per Sector, 256 Sectors Sector-Erase Cycle Time: 10ms (Max) Byte-Program Cycle Time: 20µs (Max) Minimum 10,000 Erase-Program Cy...

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SeekIC No. : 004481781 Detail

S29C51001B: Features: 128Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 8KB Boot Block (lockable) 512 bytes per Sector, 256 Sectors Sector-Er...

S29C51001B Data Sheet

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Part Number:: S29C51001B
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/10/31

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Product Details

Description

Features:

128Kx8-bit Organization
Address Access Time: 70, 90, 120 ns
Single 5V ± 10% Power Supply
Sector Erase Mode Operation
8KB Boot Block (lockable)
512 bytes per Sector, 256 Sectors Sector-Erase Cycle Time: 10ms (Max) Byte-Program Cycle Time: 20µs (Max)
Minimum 10,000 Erase-Program Cycles
Low power dissipation Active Read Current: 20mA (Typ) Active Program Current: 30mA (Typ) Standby Current: 100µA (Max)
Hardware Data Protection
Low VCC Program Inhibit Below 3.2V
Self-timed program/erase operations with end-of-cycle detection DATA Polling Toggle Bit
CMOS and TTL Interface
Available in two versions S29C51001T (Top Boot Block) S29C51001B (Bottom Boot Block)
Packages: 32-pin Plastic DIP 32-pin TSOP-I 32-pin PLCC

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Commercial	Extended	Unit
V_IN	Input Voltage (input or I/O pins)	-2 to +7	-2 to +7	v
V_IN	Input Voltage (A9pin, OE)	-2 to +13	-2 to +13	v
V_CC	Power Supply Voltage	-0.5 to +5.5	-0.5 to +5.5	v
T_STG	Storage Temerpature (Plastic)	-65 to +125	-65 to +150	°C
T_OPR	Operating Temperature	0 to +70	-40 to + 125	°C
I_OUT	Short Circuit Current(2)	200 (Max.)	200 (Max.)	mA

Description

The S29C51001T/S29C51001B is a high speed131,072 x 8 bit CMOS flash memory. Programmingor erasing the device is done with a single 5 Voltpower supply. The device has separate chip enableCE, program enable WE, and output enable OEcontrols to eliminate bus contention.

The S29C51001T/S29C51001B offers a combi-nation of features: Boot Block with Sector EraseMode. The end of program/erase cycle is detectedby DATA Polling of I/O7 or by the Toggle Bit I/O6.

The S29C51001T/S29C51001B features asector erase operation which allows each sector tobe erased and reprogrammed without affectingdata stored in other sectors. The device alsosupports full chip erase.

Boot block architecture enables the device toboot from a protected sector loaded either at thetop (S29C51001T) or the bottom (S29C51001B)sector. All inputs and outputs are CMOS and TTLcompatible.

The S29C51001T/S29C51001B is ideal forapplications that require updatable code and datastorage.

S29C51001B

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