S25FL002D0FMAI001

The S25FL002D0FMAI001 is designed as a 3.0V (2.7V to 3.6V) single power supply flash memory devices. It consists of four sectors, each with 512kb memory.

S25FL002D0FMAI001 has thirteen features. (1)Single power supply operation. (2)Memory architecture is four sectors with 512kb each. (3)Page program (up to 256 bytes) in 6ms typical and program cycles are on a page by page basis. (4)Erase means 0.5s typical sector erase time and 2.0s typical bulk erase time. (5)Endurance is 100000 cycles per sector typical. (6)Data retention is 20 years typical. (7)Device ID is electrical signature. (8)Process technology is manufactured on 0.25um process technology. (9)Package option is industry standard pinouts and 208 mil 8-pin SO package and 8-contact WSON leadless package (6x5mm). (10)Speed is 25MHz clock rate maximum. (11)Power saving standby mode is standby mode 1uA typical. (12)Memory protection. (13)SPI bus compatible serial interface. Those are all the main features.

Some absolute maximum ratings of S25FL002D0FMAI001 have been concluded into several points as follow. (1)Its ambient storage temperature range would be from -65°C to 150°C. (2)Its voltage with respect to ground would be -0.3V to 4.5V for all input and I/Os. (3)Its positive power supply would be from 2.7V to 3.6V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of S25FL002D0FMAI001 are concluded as follow. (1)Its supply voltage would be min 2.7V and typ 3V and max 3.6V. (2)Its Vcc active read current would be typ 9mA and max 12mA. (3)Its Vcc active page program current would be typ 10mA and max 16mA. (4)Its Vcc active WRSR current would be max 20mA. (5)Its Vcc active bulk erase current would be max 20mA. And so on. If you have any question or suggestion or want to know more information about S25FL002D0FMAI001 please contact us for details. Thank you!