S1NB80

Maximum RMS Reverse Voltage :
Forward Continuous Current :
Power Dissipation :
Packaging :
Product : Single Phase Bridge
Maximum Operating Temperature : + 150 C
Max Surge Current : 30 A
Maximum Reverse Leakage Current : 10 uA
Peak Reverse Voltage : 800 V
Width : 6.5 mm
Mounting Style : SMD/SMT
Forward Voltage Drop : 1.05 V
Height : 2.5 mm
Length : 6.8 mm
Package / Case : DIL SMT


Description

The S1NB80 is designed as one kind of general purpose rectifiers with voltage of 800V and current of 1A. Its typical applications include switching power supply, home appliances, office equipment, telecommuication and factory automation.

S1NB80 has three features. (1)It has small dual in-line (DIL) package. (2)5mm pitch between terminals. (3)Applicable to automatic insertion. Those are all the main features.

Some absolute maximum ratings of S1NB80 have been concluded into several points as follow. (1)Its storage temperature range would be from -40°C to 150°C. (2)Its operating junction temperature would be 150°C. (3)Its maximum reverse voltage would be 800V. (4)Its average rectified forward current would be 1A with conditions of 50Hz sine wave and R-load and on glass-epoxy substrate and Ta=25°C. (5)Its peak surge forward current would be 30A with conditions of 50Hz sine wave and non-repetitive 1 cycle peak value and Tj=25°C. (6)Its current squared time would be 4.5A2s with conditions of 1ms<=t<10ms and Tj=25°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics (if not specified the Tl=25°C) of S1NB80 are concluded as follow. (1)Its forward voltage with symbol of Vf would have the maximum value of 1.05V with conditions of If=0.5A and pulse measurement and rating of per diode. (2)Its reverse current with symbol of Ir would have the maximum value of 10uA with conditions of Vr=Vrm and pulse measurement and rating of per diode. (3)Its thermal resistance would have the maximum value of 15°C/W with conditions of junction to lead and would have the maximum value of 68°C/W with conditions of junction to ambient. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!