SpecificationsMaximum Power Dissipation @ 25oC 270 WattsMaximum Voltage and CurrentBVces Collector to Emiter Voltage 110 VoltsBVebo Emitter to Base Voltage 4.0 VoltsIc Collector Current 20 AMaximum TemperaturesStorage Temperature -65 to +150 C oOperating Junction Temperature +200oCDescriptionThe S...
S175 - 50: SpecificationsMaximum Power Dissipation @ 25oC 270 WattsMaximum Voltage and CurrentBVces Collector to Emiter Voltage 110 VoltsBVebo Emitter to Base Voltage 4.0 VoltsIc Collector Current 20 AMaximum ...
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The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A,AB or C operation in the HF/VHF frequency bands. Its high collector voltagesimplifies the design of wideband, SSB linear amplifiers. The transistor chip isbuilt using Gold Topside Metal, diffused emitter ballast resistors and siliconnitride passivation, providing the user with the Highest MTTF available.