Features: `6 Bit Phase Shifter`Digital Control (0 3.3 V)`LSB = 5.625 °`25 dBm P1dB Input Compression`100% On-Wafer RF, DC and Noise Figure Testing`100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vss) -10.0 VDC Supply Current (Iss) 10.0 mA Input Power (...
S1000: Features: `6 Bit Phase Shifter`Digital Control (0 3.3 V)`LSB = 5.625 °`25 dBm P1dB Input Compression`100% On-Wafer RF, DC and Noise Figure Testing`100% Visual Inspection to MIL-STD-883 Method 2010S...
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`6 Bit Phase Shifter
`Digital Control (0 3.3 V)
`LSB = 5.625 °
`25 dBm P1dB Input Compression
`100% On-Wafer RF, DC and Noise Figure Testing
`100% Visual Inspection to MIL-STD-883 Method 2010
Supply Voltage (Vss) | -10.0 VDC |
Supply Current (Iss) | 10.0 mA |
Input Power (Pin) | +30.0 dBm |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF Table 3 |
Junction Temperature (Tch) | MTTF Table 3 |
(3) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's 7.0 13.0 GHz phase shifter of the S1000 is digitally controlled with 6-Bit operation and a LSB of 5.625°. The device uses a single supply voltage of -7.5V and digital control voltage of 0 3.3V. This MMIC uses Mimix Broadband's 0.5um GaAs PHEMT device technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip of the S1000 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. The device is well suited for radar applications.