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RZM002P02T2L

MOSFET P-CH 20V 0.2A UMT6

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SeekIC No. : 003430680 Detail

RZM002P02T2L: MOSFET P-CH 20V 0.2A UMT6

RZM002P02T2L Data Sheet

floor Price/Ceiling Price

US $ .05~.34 / Piece | Get Latest Price
Part Number:
RZM002P02T2L
Mfg:
Supply Ability:
5000

Price Break

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  • Unit Price
  • $.34
  • $.24
  • $.19
  • $.14
  • $.1
  • $.08
  • $.06
  • $.05
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 200mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) @ Vgs: 1.4nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 115pF @ 10V
Power - Max: 150mW Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 150mW
Current - Continuous Drain (Id) @ 25° C: 200mA
Package / Case: 6-TSSOP, SC-88, SOT-363
Manufacturer: Rohm Semiconductor
Gate Charge (Qg) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Input Capacitance (Ciss) @ Vds: 115pF @ 10V
Supplier Device Package: UMT6


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