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RURD410

Features: • Ultrafast with Soft Recovery: <30ns• Operating Temperature :175oC• Reverse Voltage Up to:200V• Avalanche Energy Rated• Planar ConstructionApplication• Switching Power Supplies• Power Switching Circuits• General PurposeSpecifications ...

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RURD410: Features: • Ultrafast with Soft Recovery: <30ns• Operating Temperature :175oC• Reverse Voltage Up to:200V• Avalanche Energy Rated• Planar ConstructionApplicationR...

RURD410 Data Sheet

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Part Number:
RURD410
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Ultrafast with Soft Recovery: <30ns
• Operating Temperature :175oC
• Reverse Voltage Up to:200V
• Avalanche Energy Rated
• Planar Construction


Application

• Switching Power Supplies
• Power Switching Circuits
• General Purpose


Specifications

 
RURD410
RURD410S
RURD415
RURD415S
RURD420
RURD420S
UNITS
Peak Repetitive Reverse Voltage.
VRRM
100
150
200
V
Working Peak Reverse Voltage
VRWM
100
150
200
V
DC Blocking Voltage.
VR
100
150
200
V
Average Rectified Forward Current (TC = +159oC)
I F(AV)
4
4
4
A
Repetitive Peak Surge Current. (Square Wave, 20kHz)
IFSM
8
8
8
A
Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60Hz)
IFSM
40
40
40
A
Maximum Power Dissipation
PD
30
30
30
W
Avalanche Energy (L = 40mH)
EAVL
10
10
10
mj
Operating and Storage Temperature
TSTG,TJ
-65 to +175
-65 to +175
-65 to +175



Description

RURD410, RURD415, RURD420, RURD410S, RURD415S, and RURD420S (TA49034) are ultrafast diodes with soft recovery characteristics (tRR < 30ns). They have low forward voltage drop and are ion-implanted epitaxial planar construction.

These devices RURD410 are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors.




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