MOSFET N-CH 20V 2A TSMT3
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Series: | - | Manufacturer: | Rohm Semiconductor | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 15.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 20V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 2A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2A, 4.5V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1V @ 1mA | Gate Charge (Qg) @ Vgs: | 2nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 180pF @ 10V | ||
Power - Max: | 1W | Mounting Type: | Surface Mount | ||
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 | Supplier Device Package: | TSMT3 |