MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 5A
RUQ050N02TR: MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 5A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 10 V | Continuous Drain Current : | 5 A | ||
Resistance Drain-Source RDS (on) : | 22 mOhms | Configuration : | Single Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSMT-6 | Packaging : | Reel |
Technical/Catalog Information | RUQ050N02TR |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 5A |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 5A, 4.5V |
Input Capacitance (Ciss) @ Vds | 900pF @ 10V |
Power - Max | 1.25W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 12nC @ 4.5V |
Package / Case | TSMT6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | RUQ050N02TR RUQ050N02TR RUQ050N02DKR ND RUQ050N02DKRND RUQ050N02DKR |