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RUM002N02T2L

MOSFET N-CH 20V 0.2A VMT3

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SeekIC No. : 003431092 Detail

RUM002N02T2L: MOSFET N-CH 20V 0.2A VMT3

RUM002N02T2L Data Sheet

floor Price/Ceiling Price

US $ .04~.24 / Piece | Get Latest Price
Part Number:
RUM002N02T2L
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $.24
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  • $.16
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  • $.08
  • $.06
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  • $.04
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 200mA
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 25pF @ 10V
Power - Max: 150mW Mounting Type: Surface Mount
Package / Case: SOT-723 Supplier Device Package: VMT3    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
Power - Max: 150mW
Current - Continuous Drain (Id) @ 25° C: 200mA
Gate Charge (Qg) @ Vgs: -
Vgs(th) (Max) @ Id: 1V @ 1mA
Manufacturer: Rohm Semiconductor
Input Capacitance (Ciss) @ Vds: 25pF @ 10V
Package / Case: SOT-723
Supplier Device Package: VMT3
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V


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