Features: · Drives Two N-Channel MOSFETs
· Adaptive Shoot-Through Protection
· Internal Bootstrap Device
· Supports High Switching Frequency
− Fast Output Rise Time
− Propagation Delay 30ns
· Small SOP-8 Package
· Dual Gate-Drive Voltages for Optimal Efficiency
· Three-State Input for Bridge Shutdown
· Supply Under Voltage Protection
· High Side Short Circuit Protection
Application· Core Voltage Supplies for Intel Pentium® 4, AMD® AthlonTM Microprocessors
· High Frequency Low Profile DC-DC Converters
· High Current Low Voltage DC-DC ConvertersPinoutSpecifications` Supply Voltage (VCC)............... 12V
` Supply Voltage (PVCC).......... VCC + 0.3V
` BOOT Voltage................... 12V
` Input............ Voltage GND 0.3V to 7V
` UGATE........ VPHASE 0.3V to VBOOT + 0.3V
` LGATE..........GND 0.3V To VPVCC + 0.3V
` EDS Level
HBM........................ 2KV
MM ........................200V
` Power Dissipation, PD @ TA = 25°C
SOP-8..................... 0.625W
` Package Thermal Resistance
SOP-8, JA.................160°C /W
` Ambient Temperature Range...... 0°C ~ 85°C
` Operating Junction Temperature........125°C
` Lead Temperature (Soldering, 10 sec.).....300°C
` Storage Temperature Range............ -65°C ~ 150°CDescriptionThe RT9600 is a high frequency, dual MOSFET driver specifically designed to drive two power NChannel MOSFETs in a synchronous-rectified buck converter topology. This driver combined with a RT9237 Multi-Phase Buck PWM controller form a complete core-voltage regulator solution for advanced microprocessors.
The RT9600 drives both the lower/upper gate in a synchronous-rectifier bridge to 12V. Independent driving of upper gate through PVCC pin is achievable. Recommended PVCC ranges are from 8 to 12V for Rds(on) concern. This drive-voltage flexibility provides the advantage of optimizing applications involving trade-offs between switching losses and conduction losses.
The output drivers in the RT9600 have the capacity to efficiently switch power MOSFETs at frequencies up to 2MHz. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. RT9600 implements bootstrapping on the upper gate with only an external capacitor required. This reduces
implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.