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RSS125N03TB

MOSFET N-CH 30V 12.5A 8-SOIC

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SeekIC No. : 003432544 Detail

RSS125N03TB: MOSFET N-CH 30V 12.5A 8-SOIC

RSS125N03TB Data Sheet

floor Price/Ceiling Price

US $ .4~.88 / Piece | Get Latest Price
Part Number:
RSS125N03TB
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.88
  • $.68
  • $.62
  • $.55
  • $.48
  • $.4
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 12.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 28nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1670pF @ 10V
Power - Max: 2W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 12.5A
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Rohm Semiconductor
Supplier Device Package: 8-SOP
Gate Charge (Qg) @ Vgs: 28nC @ 5V
Input Capacitance (Ciss) @ Vds: 1670pF @ 10V
Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 12.5A, 10V


Parameters:

Technical/Catalog InformationRSS125N03TB
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C12.5A
Rds On (Max) @ Id, Vgs9.1 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds 1670pF @ 10V
Power - Max2W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs28nC @ 5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RSS125N03TB
RSS125N03TB
RSS125N03TBCT ND
RSS125N03TBCTND
RSS125N03TBCT



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