RSS110N03TB

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) @ Vds: 1300pF @ 10V
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Rohm Semiconductor
Supplier Device Package: 8-SOP
Gate Charge (Qg) @ Vgs: 17nC @ 5V
Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 11A, 10V


Parameters:

Technical/Catalog Information	RSS110N03TB
Vendor	Rohm Semiconductor(VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	10.7 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 10V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RSS110N03TB RSS110N03TB RSS110N03TBCT ND RSS110N03TBCTND RSS110N03TBCT