RSQ015P10TR

MOSFET P-CH 100V 1.5A TSMT6

product image

RSQ015P10TR Picture
SeekIC No. : 003431526 Detail

RSQ015P10TR: MOSFET P-CH 100V 1.5A TSMT6

floor Price/Ceiling Price

US $ .23~.57 / Piece | Get Latest Price
Part Number:
RSQ015P10TR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.57
  • $.49
  • $.44
  • $.39
  • $.34
  • $.28
  • $.23
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/9/16

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 470 mOhm @ 1.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 17nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 950pF @ 25V
Power - Max: 1.25W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: LPTS    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25° C: 1.5A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Rohm Semiconductor
Rds On (Max) @ Id, Vgs: 470 mOhm @ 1.5A, 10V
Gate Charge (Qg) @ Vgs: 17nC @ 5V
Input Capacitance (Ciss) @ Vds: 950pF @ 25V
Supplier Device Package: LPTS


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Industrial Controls, Meters
Line Protection, Backups
Audio Products
LED Products
Resistors
View more