MOSFET P-CH 30V 200MA
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.2 A |
Resistance Drain-Source RDS (on) : | 1.6 Ohms | Configuration : | Single |
Mounting Style : | SMD/SMT | Package / Case : | VMT-3 |
Packaging : | Reel |
Technical/Catalog Information | RSM002P03T2L |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 200mA |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 200mA, 10V |
Input Capacitance (Ciss) @ Vds | 30pF @ 10V |
Power - Max | 150mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | VMT3 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | RSM002P03T2L RSM002P03T2L RSM002P03T2LCT ND RSM002P03T2LCTND RSM002P03T2LCT |