RRS110N03TB1

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Power - Max: 2W
Gate Charge (Qg) @ Vgs: 33nC @ 5V
Current - Continuous Drain (Id) @ 25° C: 11A
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Rohm Semiconductor
Supplier Device Package: 8-SOP
Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds: 2000pF @ 10V


Parameters:

Technical/Catalog Information	RRS110N03TB1
Vendor	Rohm Semiconductor(VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	12.6 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	2000pF @ 10V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	33nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RRS110N03TB1 RRS110N03TB1 RRS110N03TB1DKR ND RRS110N03TB1DKRND RRS110N03TB1DKR