RRQ030P03TR

MOSFET P-CH 30V 3A TSMT6

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SeekIC No. : 003430579 Detail

RRQ030P03TR: MOSFET P-CH 30V 3A TSMT6

floor Price/Ceiling Price

US $ .13~.39 / Piece | Get Latest Price
Part Number:
RRQ030P03TR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.39
  • $.31
  • $.27
  • $.23
  • $.2
  • $.17
  • $.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 5.2nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 480pF @ 10V
Power - Max: 1.25W Mounting Type: Surface Mount
Package / Case: 6-SMD Supplier Device Package: TSMT6    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 1.25W
Current - Continuous Drain (Id) @ 25° C: 3A
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Rohm Semiconductor
Supplier Device Package: TSMT6
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3A, 10V
Gate Charge (Qg) @ Vgs: 5.2nC @ 5V
Input Capacitance (Ciss) @ Vds: 480pF @ 10V
Package / Case: 6-SMD


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