RN4609

The RN4609 is a kind of transistor. RN4609 includes a silicon PNP epitaxial type (PCT process) and a silicon NPN epitaxial type (PCT process). RN4609 is intended for switching, inverter circuit, interface circuit and driver circuit applications. There are some features of RN4609 as follows: (1)with built-in bias resistors; (2)simplify circuit design; (3)reduce a quantity of parts and manufacturing process; (4)including two devices in SM6 (super mini type with 6 leads).

What comes next is about the maximum ratings of RN4609 (Ta=25). First is about the Q1 section: (1)collector-base voltage, VCBO: -50 V; (2)collector-emitter voltage, VCEO: -50 V; (3)emitter-base voltage, VEBO: -15 V; (4)collector current, IC: -100 mA. Then is about the Q2 section: (1)collector-base voltage, VCBO: 50 V; (2)collector-emitter voltage, VCEO: 50 V; (3)emitter-base voltage, VEBO: 15 V; (4)collector current, IC: 100 mA. The last one is about the Q1, Q2 common maximum ratings: (1)collector power dissipation, PC: 300 mW; (2)junction temperature, Tj: 150; (3)storage temperature range, Tstg: -55 to 150.

The following is about the electrical characteristics of RN4609 (Ta=25). First is about the Q1 section: (1)collector cut-off current, ICBO: -100 nA at VCB=-50 V, IE=0; ICEO: -500 nA max at VCE=-50 V, IB=0; (2)emitter cut-off current, IEBO: -0.167 mA min and -0.311 mA max at VEB=-15 V, IC=0; (3)DC current gain, hFE: 70 min at VCE=-5 V, IC=-10 mA; (4)collector-emitter saturation voltage, VCE(sat): -0.1 V typ and -0.3 V max at IC=-5 mA, IB=-0.25 mA; (6)transition frequency, fT: 200 MHz typ at VCE=-10 V, IC=-5 mA; (5)collector output capacitance, Cob: 3 pF typ and 6 pF max at VCB=-10 V, IE=0, f=1 MHz. Then is about the Q2 section: (1)collector cut-off current, ICBO: 100 nA at VCB=50 V, IE=0; ICEO: 500 nA max at VCE=50 V, IB=0; (2)emitter cut-off current, IEBO: 0.167 mA min and 0.311 mA max at VEB=15 V, IC=0; (3)DC current gain, hFE: 70 min at VCE=5 V, IC=10 mA; (4)collector-emitter saturation voltage, VCE(sat): 0.1 V typ and 0.3 V max at IC=5 mA, IB=0.25 mA; (6)transition frequency, fT: 250 MHz typ at VCE=10 V, IC=5 mA; (5)collector output capacitance, Cob: 3 pF typ and 6 pF max at VCB=10 V, IE=0, f=1 MHz. The input resistor, R1: 32.9k min, 47k typ and 61.1k max.