RN1110

The RN1110 is a kind of transistor. It is a silicon NPN epitaxial type (PCT process). It is intended for switching, inverter circuit, interface circuit and driver circuit applications. There are some features as follows: (1)with built-in bias resistors; (2)simplify circuit design; (3)reduce a quantity of parts and manufacturing process; (4)complementary to RN2110-RN2111.

What comes next is about the maximum ratings of RN1110(Ta=25): (1)collector-base voltage, VCBO: 50 V; (2)collector-emitter voltage, VCEO: 50 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 100 mA; (5)collector power dissipation, PC: 100 mW; (6)junction temperature, Tj: 150; (7)storage temperature range, Tstg: -55 to 150.

The following is about the electrical characteristics of RN1110 (Ta=25): (1)collector cut-off current, ICBO: 0.1A at VCB=50 V, IE=0; (2)emitter cut-off current, IEBO: 0.1A at VEB=5 V, IC=0; (3)DC current gain, hFE: 120 min and 700 max at VCE=5 V, IC=1 mA; (4)collector-emitter saturation voltage, VCE(sat): 0.1 V typ and 0.3 V max at IC=5 mA, IB=0.25 mA; (5)transition frequency, fT: 250 MHz typ at VCE=10 V, IC=5 mA; (6)collector output capacitance, Cob: 3 pF typ and 6 pF max at VCB=10 V, IE=0, f=1 MHz; (7)input resistor, R1: 3.29 min, 4.7 typ and 6.11 max.