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RMDA1840

Features: · 4 mil substrate· Small-signal gain 22 dB (typ.)· Pout 1 dB comp 23 dBm (typ.)· Chip size 4.67 mm x 2.00 mmSpecifications Parameter Symbol Value Units Positive DC voltage (+5 V Typical) Vd +6 Volts Negative DC voltage Vg -2 Volts Simultaneous (Vd - Vg) Vdg +8 V...

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SeekIC No. : 004477980 Detail

RMDA1840: Features: · 4 mil substrate· Small-signal gain 22 dB (typ.)· Pout 1 dB comp 23 dBm (typ.)· Chip size 4.67 mm x 2.00 mmSpecifications Parameter Symbol Value Units Positive DC voltage (+5 V...

RMDA1840 Data Sheet

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Part Number:
RMDA1840
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· 4 mil substrate
· Small-signal gain 22 dB (typ.)
· Pout 1 dB comp 23 dBm (typ.)
· Chip size 4.67 mm x 2.00 mm


Specifications

Parameter Symbol Value Units
Positive DC voltage (+5 V Typical) Vd +6 Volts
Negative DC voltage Vg -2 Volts
Simultaneous (Vd - Vg) Vdg +8 Volts
Positive DC Current ID 442 mA
RF Input Power (from 50 source) PIN +15 dBm
Operating Baseplate Temperature TC -30 to +85
Storage Temperature Range Tstg -55 to +125
Thermal Resistance
(Channel to Backside)		 RJC 53 /W



Description

The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point
to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The RMDA1840 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of applications, such as a driver amplifier or a frequency multiplier.




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