Features: • 2 Watt Linear output power at 36dBc ACPR1 for CDMA operation• OIP3 43dBc at 27 and 30dBm power output• Small Signal Gain of > 30dB• Small outline SMD packageSpecifications Symbol Parameter Ratings Units VDD Drain Supply Voltage1 +10 V VGS Ga...
RMBA09501A: Features: • 2 Watt Linear output power at 36dBc ACPR1 for CDMA operation• OIP3 43dBc at 27 and 30dBm power output• Small Signal Gain of > 30dB• Small outline SMD packageSp...
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Symbol | Parameter | Ratings | Units |
VDD |
Drain Supply Voltage1 |
+10 | V |
VGS |
Gate Supply Voltage | -5 | V |
Pin |
RF Input Power (from 50source) |
+5 | dBm |
TC |
Case Operating Temperature | -30 to +85 | |
TSTG |
Storage Temperature Range | -40 to +100 |
The RMBA09501A is a high power, highly linear Power Amplifier. The two stage circuit uses our advanced 0.25m pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation.