RLP03N06CLE

• 0.30A, 60V
• r_DS(ON) = 6.0W
• Built in Current Limit I_LIMIT 0.140 to 0.210A at 150
• Built in Voltage Clamp
• Temperature Compensating PSPICE^® Model
• 2kV ESD Protected
• Controlled Switching Limits EMI and RFI
• Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS                60             V
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR                 60             V
Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed) . . . . . . . . . . . .VGS                  +5.5          V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID                 Self           Limited
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD                  30            W


Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .                        0.2            W /

Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . .ESD                      2                KV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG                   -55 to 175  
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL                        300           
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg                        260           

Temperature Dependence of Current Limiting and
Switching Speed Performance
The RLD03N06CLE, CLESM and RLP03N06CLE are monolithic power devices which incorporate a Logic Level power MOSFET transistor with a current sensing scheme and control circuitry to enable the device to self limit the drain source current flow. The current sensing scheme supplies current to a resistor that is connected across the base to emitter of a bipolar transistor in the control section. The collector of this bipolar transistor is connected to the gate of the power MOSFET transistor RLP03N06CLE. When the ratiometric current from the current sensing reaches the value required to forward bias the base emitter junction of this bipolar transistor, the bipolar "turns on". A resistor is incorporated in series with the gate of the power MOSFET transistor allowing the bipolar transistor to adjust the drive on the gate of the power MOSFET transistor to a voltage which then maintains a constant current in the power MOSFET transistor. Since both the
ratiometric current sensing scheme and the base emitter unction voltage of the bipolar transistor vary with temperature, the current at which the device limits is a function of temperature. This dependence is shown in Figure 3.

The resistor RLP03N06CLE in series with the gate of the power MOSFET transistor also results in much slower switching performance than in standard power MOSFET transistors. This is an advantage where fast switching can cause EMI or RFI. The switching speed is very predictable.