RK3055ETL

MOSFET N-CHAN

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SeekIC No. : 00164477 Detail

RK3055ETL: MOSFET N-CHAN

floor Price/Ceiling Price

Part Number:
RK3055ETL
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/1/8

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.15 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : CPT3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.15 Ohms
Package / Case : CPT3


Parameters:

Technical/Catalog InformationRK3055ETL
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs150 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 520pF @ 10V
Power - Max20W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RK3055ETL
RK3055ETL
RK3055ETLCT ND
RK3055ETLCTND
RK3055ETLCT



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