MOSFET N-CH 60V 2.5A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V |
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 2 A |
Resistance Drain-Source RDS (on) : | 0.21 Ohms | Configuration : | Single |
Mounting Style : | Through Hole | Package / Case : | MPT3 |
Packaging : | Reel |
Technical/Catalog Information | RJP020N06T100 |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 2A |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 2A, 4.5V |
Input Capacitance (Ciss) @ Vds | 160pF @ 10V |
Power - Max | 500mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 10nC @ 4V |
Package / Case | SC-62, SOT-89, MPT3 (3 leads + Tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | RJP020N06T100 RJP020N06T100 RJP020N06T100DKR ND RJP020N06T100DKRND RJP020N06T100DKR |