Features: • Guaranteed Total Dose Radiation Capability• Low Single Event Upset Susceptibility• High Dose Rate Survivability• Latch-Up Immunity Guaranteed• QML Qualified Devices• Commercial Devices Available for Prototyping and Pre-Production Requirements• ...
RH1280: Features: • Guaranteed Total Dose Radiation Capability• Low Single Event Upset Susceptibility• High Dose Rate Survivability• Latch-Up Immunity Guaranteed• QML Qualified...
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The RH1020 and RH1280 devices are targeted for use in military and space applications subject to radiation effects.
1. Accumulated Total Dose Effects
With the significant increase in Earth-orbiting satellite launches and the ever-decreasing time-to-launch design cycles, the RH1020 and RH1280 devices offer the best combination of total dose radiation hardness and quick design implementation necessary for this increasingly competitive industry. In addition, the high total dose capability allows the use of these devices for deep space probes, which encounter other planetary bodies where the total dose radiation effects are more pronounced.
2. Single Event Effects (SEE)
Many space applications are more concerned with the number of single event upsets and potential for latch-up in space. The RH1020 and RH1280 devices are latch-up immune, guaranteeing that no latch-up failures will occur. Single event upsets can occur in these devices as with all semiconductor products, but the rate of upset is low, as shown in the RadHard Radiation specifications table on page 7.
3. High Dose Rate Survivability
An additional radiation concern is high dose rate survivability. Solar flares and sudden nuclear events can cause immediate high levels of radiation. The RadHard devices are appropriate for use in these types of applications, including missile systems,ground-based communication systems, and orbiting satellites.
Symbol |
Parameter |
Limits |
Units |
VCC |
DC Supply Voltage2,3,4 |
0.5 to +7.0 |
V |
VI |
Input Voltage |
0.5 to VCC +0.5 |
V |
VO |
Output Voltage |
0.5 to VCC +0.5 |
V |
IIO |
I/O Source/Sink Current5 |
±20 |
mA |
TSTG |
Storage Temperature |
65 to +150 |
°C |
Notes:
1. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. Devices should not be operated outside the recommended operating conditions.
2. VPP = VCC , except during device operation.
3. VSV = VCC , except during device operation.
4. VKS = GND , except during device operation.
5. Device inputs are normally high impedance and draw extremely low current. However, when input voltage is greater than VCC + 0.5V or less than GND 0.5V, the internal protection diode will be forward-biased and can draw excessive current.
Actel Corporation, the leader in antifuse-based field programmable gate arrays (FPGAs), offers fully guaranteed RadHard versions of the A1280 and A1020 devices RH1280 with gate densities of 8,000 and 2,000 gate array gates, respectively.
The RH1020 and RH1280 devices are processed in 0.8,two-level metal epitaxial bulk CMOS technology. The devices are based on Actel's patented channeled array architecture,and employ Actel's PLICE antifuse technology. This architecture offers gate array flexibility, high performance,and fast design implementation through user programming.
Actel devices RH1280 also provide unique on-chip diagnostic probe capabilities, allowing convenient testing and debugging.On-chip clock drivers with hard-wired distribution networks provide efficient clock distribution with minimum skew. A security fuse may be programmed to disable all further programming, and to protect the design from being copied or reverse engineered.