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RFS1003

Features: • 29 dBm P1dB@7V• 24 dBm P1dB@3V• 20 dB gain• Input matched to 50 ohms• Simple output matchingApplication• U-NII fixed-wireless CPE• 5 GHz ISM band wireless equipment• WLAN/802.11a/HIPERLAN/2Specifications Parameter Rating Uni ...

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SeekIC No. : 004476665 Detail

RFS1003: Features: • 29 dBm P1dB@7V• 24 dBm P1dB@3V• 20 dB gain• Input matched to 50 ohms• Simple output matchingApplication• U-NII fixed-wireless CPE• 5 GHz ISM ban...

RFS1003 Data Sheet

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Part Number:
RFS1003
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 29 dBm P1dB@7V
• 24 dBm P1dB@3V
• 20 dB gain
• Input matched to 50 ohms
• Simple output matching


Application

• U-NII fixed-wireless CPE
• 5 GHz ISM band wireless equipment
• WLAN/802.11a/HIPERLAN/2


Specifications

Parameter
Rating
Uni
DC Power Supply
8.0
V
DC Gate Voltage
-5.0 min, -0.5 max
V
DC Supply Current
1000
mA
Maximum RF input level
+13
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-55 to +150
°C



Description

The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the device is ideal as a final stage for wireless applications requiring high transmit linearity. The input of the PA is matched to 50 ohms and the output can be easily matched for optimum linearity and power performance at the desired frequency of operation between 5.1 and 5.9 GHz.




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