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RFK25N18

Features: • 25A, 180V and 200V• rDS(ON) = 0.150WSpecifications RFK25N18 RFK25N20 UNITS Drain to Source Voltage (Note 1) VDSS 180 200 V Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 180 200 V Continuous Drain Curren ID 25 25 A Pulsed Drain Current (Note 3)...

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SeekIC No. : 004476554 Detail

RFK25N18: Features: • 25A, 180V and 200V• rDS(ON) = 0.150WSpecifications RFK25N18 RFK25N20 UNITS Drain to Source Voltage (Note 1) VDSS 180 200 V Drain to Gate Voltage (RGS = 1MW)...

RFK25N18 Data Sheet

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Part Number:
RFK25N18
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 25A, 180V and 200V
• rDS(ON) = 0.150W


Specifications

  RFK25N18 RFK25N20 UNITS
Drain to Source Voltage (Note 1) VDSS 180 200 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 180 200 V
Continuous Drain Curren ID 25 25 A
Pulsed Drain Current (Note 3) IDM 60 60 V
Maximum Power Dissipation PD ±20 ±20 V
Linear Derating Factor 0.0667 0.0667 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 0.0667 0.0667 W/oC
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFK25N18 designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFK25N18 can be operated directly from integrated circuits.




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