RFF70N06

Features:

• 25A†, 60V
• rDS(ON) = 0.025W
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
• Reliability Screened
† Current is limited by the package capability.


Specifications

	RFF70N06	UNITS
Drain to Source Voltage (Note 1) VDSS	60	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	60	V
Continuous Drain Current ID	50	A
Pulsed Drain Current (Note 3) IDM	120	A
Gate to Source Voltage VGS	±20	V
Power Dissipation PD	100	W
Linear Derating Factor	0.80	A
Pulsed Avalanche Rating UIS	Refer to UIS SOA
Operating and Storage Temperature .TJ, TSTG	-55 to 75	o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL	300	o C

Description

The RFF70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. RFF70N06 was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors RFF70N06 can be operated directly from integrated circuits. <BR><BR>Reliability screening is available as either commercial or TX/TXV equivalent of MIL-S-19500. Contact Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet.

Formerly developmental type TA49007.